DatasheetsPDF.com

PHU77NQ03T

NXP
Part Number PHU77NQ03T
Manufacturer NXP
Description N-channel TrenchMOS FET
Published Sep 12, 2015
Detailed Description PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 Product data sheet 1. Product profile 1.1 General de...
Datasheet PDF File PHU77NQ03T PDF File

PHU77NQ03T
PHU77NQ03T

Overview
PHD/PHU77NQ03T N-channel TrenchMOS FET Rev.
01 — 28 November 2006 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features I Fast switching I Low thermal resistance 1.
3 Applications I DC-to-DC converters I Computer motherboard 1.
4 Quick reference data I VDS ≤ 25 V I RDSon ≤ 9.
5 mΩ I ID ≤ 75 A I QGD = 3.
2 nC (typ) 2.
Pinning information Table 1.
Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline [1] mb 2 13 SOT428 (DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package.
Symbol mb D 123 SOT533 (IPAK) G mbb076 S NXP Semiconductors PHD/PHU77NQ03T N-channel TrenchMOS FET 3.
Ordering information Table 2.
Ordering information Type number Package Name PHD77NQ03T DPAK PHU77NQ03T IPAK Description plastic single-ended surface-mounted package; 3 leads (one lead cropped) plastic single-ended package; 3 leads (in-line) 4.
Limiting values Table 3.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage drain-gate voltage (DC) gate-source voltage drain current IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 IS source current ISM peak source current Avalanche ruggedness Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs EDS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 32 A; tp = 0.
17 ms; VDS ≤ 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Min −55 −55 - - Version SOT428 SOT533 Max 25 25 ±20 75 55.
9 240 107 +175 +175 Unit V V V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)