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IS64WV25616EDBLL

Part Number	IS64WV25616EDBLL
Manufacturer	ISSI
Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Published	Sep 13, 2015
Detailed Description	IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High...
Datasheet	IS64WV25616EDBLL PDF File

Overview

IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.
4V to 3.
6V (10 ns) — Vdd 3.
3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.
It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down ...

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IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM - ISSI

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