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IRFS33N15DPbF

International Rectifier
Part Number IRFS33N15DPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 14, 2015
Detailed Description SMPS MOSFET PD- 95537 IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF HEXFET® Power MOSFET Applications l High frequency DC...
Datasheet PDF File IRFS33N15DPbF PDF File

IRFS33N15DPbF
IRFS33N15DPbF

Overview
SMPS MOSFET PD- 95537 IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 150V RDS(on) max 0.
056Ω ID 33A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB33N15D D2Pak TO-262 IRFS33N15D IRFSL33N15D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max.
33 24 130 3.
8 170 1.
1 ± 30 4.
4 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter Notes  through ‡ are on page 11 www.
irf.
com 1 7/21/04 IRFB/IRFS/IRFSL33N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 150 ––– ––– 3.
0 ––– ––– ––– ––– ––– ––– V 0.
18 ––– V/°C ––– 0.
056 Ω ––– 5.
5 V ––– 25 ––– 250 µA ––– 100 ––– -100 nA VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA † VGS = 10V, ID = 20A „ VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions gfs Forward Transconductance Qg Tota...


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