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CEU05N65

CET
Part Number CEU05N65
Manufacturer CET
Description N-Channel MOSFET
Published Sep 17, 2015
Detailed Description CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. Supe...
Datasheet PDF File CEU05N65 PDF File

CEU05N65
CEU05N65

Overview
CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.
4Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 650 ±30 4 2.
5 16 56 0.
45 Single Pulsed Avalanche Energy d EAS 43 Single...


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