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CED03N8

CET
Part Number CED03N8
Manufacturer CET
Description N-Channel MOSFET
Published Sep 17, 2015
Detailed Description CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.5A, RDS(ON) = 4.8Ω @V...
Datasheet PDF File CED03N8 PDF File

CED03N8
CED03N8

Overview
CED03N8/CEU03N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 2.
5A, RDS(ON) = 4.
8Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 800 ±30 2.
5 10 75 0.
5 Single Pulsed Avalanche Energy d EAS 32 Single Pulsed Avalanche Current d IAS 3 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 50 Units V V A A W W/ C mJ A C Units C/W C/W This is preliminary information on a n...


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