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CEU02N9

CET
Part Number CEU02N9
Manufacturer CET
Description N-Channel MOSFET
Published Sep 17, 2015
Detailed Description CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8Ω @VGS...
Datasheet PDF File CEU02N9 PDF File

CEU02N9
CEU02N9

Overview
CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.
8Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 900 ±30 2 8 75 0.
5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Char...


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