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SVF20N60PN

SILAN MICROELECTRONICS
Part Number SVF20N60PN
Manufacturer SILAN MICROELECTRONICS
Description 20A 600V N-CHANNEL MOSFET
Published Sep 20, 2015
Detailed Description SVF20N60F/PN_Datasheet 20A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N60F/PN is an N-channel enhancement mode power...
Datasheet PDF File SVF20N60PN PDF File

SVF20N60PN
SVF20N60PN

Overview
SVF20N60F/PN_Datasheet 20A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N60F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 20A, 600V, RDS(on(typ)=0.
28Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVF20N60F SVF20N60PN Package TO-220F-3L TO-3PN Marking SVF20N60F 20N60 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
1 2012.
11.
15 Page 1 of 8 Silan Microelectronics SVF20N60F/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ Tstg Rating SVF20N60F SVF20N60PN 600 ±30 20.
0 12.
6 80.
0 74 258 0.
59 2.
06 1433 -55～+150 -55～+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA Rating SVF20N60F SVF20N60PN 1.
69 0.
48 120 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capaci...


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