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NP100N055PUK

Renesas
Part Number NP100N055PUK
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Sep 20, 2015
Detailed Description Preliminary Data Sheet NP100N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 Description The...
Datasheet PDF File NP100N055PUK PDF File

NP100N055PUK
NP100N055PUK

Overview
Preliminary Data Sheet NP100N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0589EJ0100 Rev.
1.
00 Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 3.
25 m MAX.
(VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP100N055PUK-E1-AY *1 NP100N055PUK-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Tempe...


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