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IRLR3714PbF

Part Number	IRLR3714PbF
Manufacturer	International Rectifier
Description	SMPS MOSFET
Published	Sep 21, 2015
Detailed Description	SMPS MOSFET PD - 95554A IRLR3714PbF IRLU3714PbF Applications l High Frequency Isolated DC-DC Converters with Synchrono...
Datasheet	IRLR3714PbF PDF File

Overview

SMPS MOSFET PD - 95554A IRLR3714PbF IRLU3714PbF Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS 20V RDS(on) max 20mΩ ID 36A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage and Current D-Pak IRLR3714 I-Pak IRLU3714 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount) Max.
20 ± 20 36 31 140 47 33 0.
31 -55 to + 175 Units V V A W W W/°C °C Typ.
––– ––– ––– Max.
3.
2 50 110 Units °C/W Notes through are on page 10 www.
irf.
com 1 1/11/05 IRLR/U3714PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance 20 ––– ––– ––– ––– 0.
022 15 21 ––– V ––– V/°C 20 mΩ 28 VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 18A VGS = 4.
5V, ID = 14A VGS(th) IDSS IGSS Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 1.
0 ––– 3.
0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C ––– ––– 200 nA VGS = 16V ––– ––– -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 10V, ID...

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IRLR3714PbF SMPS MOSFET - International Rectifier

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