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EMH1405

Sanyo
Part Number EMH1405
Manufacturer Sanyo
Description N-Channel Silicon MOSFET
Published Sep 21, 2015
Detailed Description Ordering number : ENA1667A EMH1405 SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose ...
Datasheet PDF File EMH1405 PDF File

EMH1405
EMH1405

Overview
Ordering number : ENA1667A EMH1405 SANYO Semiconductors DATA SHEET EMH1405 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=14mΩ(typ) • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.
8mm) Ratings 30 ±20 8.
5 34 1.
5 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ.
) 7045-001 0.
2 8 5 0.
125 EMH1405-TL-H Product & Package Information • Package : EMH8 • JEITA, JEDEC :- • Minimum Packing Quantity : 3,000 pcs.
/reel Taping Type : TL Marking 0.
05 0.
75 0.
2 1.
7 0.
2 2.
1 1 0.
5 2.
0 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : EMH8 TL Electrical Connection 8765 KE LOT No.
1234 http://semicon.
sanyo.
com/en/network 50112 TKIM/60210PE TK IM TC-00002377 No.
A1667-1/7 EMH1405 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=10V ID=2A, VGS=4.
5V ID=2A, VGS=4V VDS=10V, f=1MHz See specified Test Circuit.
VDS=15V, VGS=10V, ID=8.
5A IS=8.
5A, VGS=0V Switching Time Test Circuit VIN 10...


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