DatasheetsPDF.com

SVF4N60MJ

SILAN MICROELECTRONICS
Part Number SVF4N60MJ
Manufacturer SILAN MICROELECTRONICS
Description 600V N-CHANNEL MOSFET
Published Sep 21, 2015
Detailed Description SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel en...
Datasheet PDF File SVF4N60MJ PDF File

SVF4N60MJ
SVF4N60MJ

Overview
SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.
0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60DTR SVF4N60MJ SVF4N60M Package TO-220-3L TO-220F-3L TO-220F-3L TO-262-3L TO-252-2L TO-252-2L TO-251J-3L TO-251D-3L Marking SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60D SVF4N60MJ SVF4N60M HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn Material Pb free Pb free Halogen free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tube Tape & Reel Tube Tube REV:1.
6 2012.
07.
24 Page 1 of 11 Silan Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted；reference only) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol SVF4N 60T Ratings SVF4N SVF4N SVF4N 60F(G) 60D/M 60MJ SVF4N 60K Unit VDS 600 V VGS ±30 V 4.
0 ID A 2.
5 IDM 16 A 100 33 77 86 95 W PD 0.
8 0.
26 0.
62 0.
69 0.
76 W/°C EAS 217 mJ TJ -55～+150 °C Tstg -55～+150 °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol SVF...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)