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CEB15A03

CET
Part Number CEB15A03
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.5mΩ ...
Datasheet PDF File CEB15A03 PDF File

CEB15A03
CEB15A03

Overview
CEP15A03/CEB15A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 190A, RDS(ON) = 4.
5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 190 IDM 760 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 200 1.
3 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 405 52 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
75 62.
5 Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 2.
2010.
June http://www.
cet-mos.
com CEP15A03/CEB15A03 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c VGS(th) RDS(on) gFS VGS = VDS, ID = 250µA VGS = 10V, ID = 70A VDS = 25V, ID = 70A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 28V, ID = 10A, VGS = 10V, RGEN = 4.
5Ω Turn-Off Fall...


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