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CEP73A3G

CET
Part Number CEP73A3G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9mΩ @V...
Datasheet PDF File CEP73A3G PDF File

CEP73A3G
CEP73A3G

Overview
CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9mΩ @VGS = 10V.
RDS(ON) = 16mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 62 248 75 0.
52 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.
5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice .
1 Rev 1.
2009.
June http://www.
cet-mos.
com CEP73A3G/C...


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