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CEP16N10L

CET
Part Number CEP16N10L
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 11...
Datasheet PDF File CEP16N10L PDF File

CEP16N10L
CEP16N10L

Overview
CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.
2A, RDS(ON) = 115mΩ @VGS = 10V.
RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 15.
2 60 60 0.
48 Operating and Store Temperature Range...


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