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CEB16N10

CET
Part Number CEB16N10
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. ...
Datasheet PDF File CEB16N10 PDF File

CEB16N10
CEB16N10

Overview
CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.
2A, RDS(ON) = 120mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 15.
2 60 60 0.
48 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characterist...


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