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CEB84A4

CET
Part Number CEB84A4
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(...
Datasheet PDF File CEB84A4 PDF File

CEB84A4
CEB84A4

Overview
CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.
1mΩ @VGS = 10V.
RDS(ON) = 7.
8mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ±20 Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ID IDM PD 90 62 360 71 0.
47 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.
1 62.
5 Units C/W C/W Details are subject to change without notice .
1 Rev 1.
2010.
Oct.
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