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CEP60N06G

CET
Part Number CEP60N06G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Su...
Datasheet PDF File CEP60N06G PDF File

CEP60N06G
CEP60N06G


Overview
CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 60 240 125 0.
83 Operating and Store Temperature Range TJ,Tstg -65 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
2 62.
5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice .
1 Rev 4.
2011.
Aug http://www.
cet-mos.
com CEP60N06G/CEB60N06G Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 24A Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 30V, ID = 15A, VGS = 10V, RGEN = 4.
7Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 48V, ID = 75A, VGS = 10V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode F...


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