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IRFS4410ZPbF

Part Number	IRFS4410ZPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Sep 28, 2015
Detailed Description	IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterrupti...
Datasheet	IRFS4410ZPbF PDF File

Overview

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free HEXFET® Power MOSFET D VDSS 100V RDS(on) typ.
7.
2m: :G max.
9.
0m S ID (Silicon Limited) 97A D D D DS G TO-220AB IRFB4410ZPbF DS G D2Pak IRFS4410ZPbF DS G TO-262 IRFSL4410ZPbF G Gate D Drain S Source Base Part Number IRFB4410ZPbF IRFSL4410ZPbF IRFS4410ZPbF Package Type TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Quantity 50 50 50 800 800 Orderable Part Number IRFB4410ZPbF IRFSL4410ZPbF IRFS4410ZPbF IRFS4410ZTRLPbF IRFS4410ZTRRPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) dSingle Pulse Avalanche Energy IAR Avalanche Current fEAR Repetitive Avalanche Energy Thermal Resistance RθJC RθCS RθJA RθJA Symbol Parameter jJunction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 jJunction-to-Ambient, TO-220 ijJunction-to-Ambient (PCB Mount) , D2Pak Max.
97 69 390 230 1.
5 ± 20 16 -55 to + 175 300 x x10lb in (1.
1N m) 242 See Fig.
14, 15, 22a, 22b, Typ.
––– 0.
50 ––– ––– Max.
0.
65 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.
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com © 2014 International Rectifier Submit Datasheet Feedback A...

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IRFS4410ZPbF HEXFET Power MOSFET - International Rectifier

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