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CEB01N65

CET
Part Number CEB01N65
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CE...
Datasheet PDF File CEB01N65 PDF File

CEB01N65
CEB01N65

Overview
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650V 650V RDS(ON) 10.
5Ω 10.
5Ω 10.
5Ω ID 1.
3A 1.
3A 1.
3A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 650 ±30 1.
3 5.
2 41 0.
33 1.
3 d 5.
2 d 27 0.
22 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 62.
5 4.
5 65 Units V V A A W W/ C ...


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