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CEA3252

CET
Part Number CEA3252
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. R...
Datasheet PDF File CEA3252 PDF File

CEA3252
CEA3252

Overview
CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V.
RDS(ON) = 45mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 5 IDM 20 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units ...


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