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CEA6426

Part Number	CEA6426
Manufacturer	CET
Description	N-Channel MOSFET
Published	Sep 29, 2015
Detailed Description	CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110...
Datasheet	CEA6426 PDF File

Overview

CEA6426 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.
6A, RDS(ON) = 90mΩ @VGS = 10V.
RDS(ON) = 110mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 4.
6 IDM 18.
4 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C...

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CEA6426 N-Channel MOSFET - CET

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