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CEA6200

CET
Part Number CEA6200
Manufacturer CET
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V...
Datasheet PDF File CEA6200 PDF File

CEA6200
CEA6200

Overview
CEA6200 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 1.
8A, RDS(ON) = 250mΩ @VGS = 10V.
RDS(ON) = 330mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 1.
8 IDM 7.
2 Maximum Power Dissipation PD 1.
3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2007.
June http://www.
cet-mos.
com CEA6200 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off C...


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