DatasheetsPDF.com

APM1110NU

Sinopower
Part Number APM1110NU
Manufacturer Sinopower
Description N-Channel MOSFET
Published Sep 29, 2015
Detailed Description APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.) @ VGS=10V RDS(O...
Datasheet PDF File APM1110NU PDF File

APM1110NU
APM1110NU

Overview
APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.
) @ VGS=10V RDS(ON)= 235mΩ (max.
) @ VGS=4.
5V • ESD Protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • 100% UIS + R Tested g Pin Description D S G S D G Top View of TO-252-2 Top View of TO-251 D Applications G • Power Management in TV Inverter.
S N-Channel MOSFET Ordering and Marking Information APM1110N Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-2 UB : TO-251 Operating Junction Temperature Range C : -55 to 175 oC Handling Code TR : Tape & Reel for TO-252-2 Package TU : Tube for TO-251 Package Assembly Material G : Halogen and Lead Free Device APM1110N U/UB : APM1110N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev.
A.
5 - July, 2015 1 www.
sinopowersemi.
com APM1110NU/APM1110NUB Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipatio...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)