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K2607

Toshiba Semiconductor
Part Number K2607
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel FET
Published Sep 30, 2015
Detailed Description 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converte...
Datasheet PDF File K2607 PDF File

K2607
K2607

Overview
2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 1.
0 Ω (typ.
) z High forward transfer admittance : |Yfs|= 7.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) z Enhancement mode : Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 800 800 ±30 9 27 150 778 9 15 150 −55 to 150 V V V A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 0.
833 50 °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 17.
4 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by maximum channel tempera...


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