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CEG2288

CET
Part Number CEG2288
Manufacturer CET
Description Dual N-Channel MOSFET
Published Oct 1, 2015
Detailed Description CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON...
Datasheet PDF File CEG2288 PDF File

CEG2288
CEG2288

Overview
CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.
2A, RDS(ON) = 24mΩ @VGS = 4.
5V.
RDS(ON) = 34mΩ @VGS = 2.
5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 Package.
G2 S2 S2 D TSSOP-8 G1 S1 S1 D D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 6.
2 IDM 25 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 1.
2006.
June http://www.
cet-mos.
com CEG2288 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d VGS(th) RDS(on) gFS Ciss Coss Crss VGS = VDS, ID = 250µA 0.
5 1.
0 V VGS = 4.
5V, ID = 6.
2A 19 24 mΩ VGS = 2.
5V, ID = 5.
5A 25 34 mΩ VDS = 5V, ID = 6.
2A 17 S 835 pF VDS = 10V, VGS = 0V, f = 1.
0 MHz 125 pF 95 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 10V, ID = 6.
2A, VGS = 5V, RGEN = 3Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 10V, ID = 6.
2A, VGS = 4.
5V Qgd Drain-Sourc...


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