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CEH2288

CET
Part Number CEH2288
Manufacturer CET
Description N-Channel MOSFET
Published Oct 1, 2015
Detailed Description CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = ...
Datasheet PDF File CEH2288 PDF File

CEH2288
CEH2288

Overview
CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.
2A , RDS(ON) = 23mΩ @VGS = 4.
5V.
RDS(ON) = 30mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 G1(6) D1(2) G2(4) S1(1) D2(5) S2(3) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 5.
2 IDM 20 Maximum Power Dissipation PD 1.
14 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 110 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 3.
2013.
April http://www.
cetsemi.
com Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Curren...


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