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IRF1405ZLPbF

Part Number	IRF1405ZLPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 3, 2015
Detailed Description	Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Datasheet	IRF1405ZLPbF PDF File

Overview

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 4.
9mΩ S ID = 75A TO-220AB D2Pak TO-262 IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dEAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) hSingle Pulse Avalanche Energy Tested Value ÃIAR Avalanche Current gEAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient iJunction-to-Ambient (PCB Mount, steady state) HEXFET® is a registered trademark of International Rectifier.
www.
irf.
com Max.
150 110 75 600 230 1.
5 ± 20 270 420 See Fig.
12a, 12b, 15, 16 -55 to + 175 300 (1.
6mm from case ) y y10 lbf in (1.
1N m) Typ.
––– 0.
50 ––– ––– Max.
0.
65 ––– 62 40 Units A W W/°C V mJ A mJ °C Units °C/W 1 07/14/10 IRF1405Z/S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions ...

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IRF1405ZLPbF HEXFET Power MOSFET - International Rectifier

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