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N0412N

Renesas
Part Number N0412N
Manufacturer Renesas
Description N-CHANNEL MOSFET
Published Oct 3, 2015
Detailed Description N0412N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0554EJ0100 Rev.1.00 Nov 07, 2011 Description The N04...
Datasheet PDF File N0412N PDF File

N0412N
N0412N

Overview
N0412N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0554EJ0100 Rev.
1.
00 Nov 07, 2011 Description The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance RDS (on) = 3.
7 mΩ MAX.
(VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP.
(VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No.
N0412N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package TO-220 1.
9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 40 ±20 ±100 ±400 119 1.
5 150 −55 to +150 55 300 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance ∗2 Rth(ch-A) 1.
05 83.
3 °C/W °C/W Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2.
Starting Tch = 25°C, RG = 25 Ω, VDD = 25 V, VGS = 20 → 0 V, L = 100 μH R07DS0554EJ0100 Rev.
1.
00 Nov 07, 2011 Page 1 of 6 N0412N Chapter Title Electrical Characteristics (TA = 25°C, all terminals are connected) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state Resistance ∗1 Symbol IDSS IGSS VGS(off) | yfs | RDS(on) MIN.
2.
0 26 TYP.
2.
7 MAX.
1 ±100 4.
0 3.
7 Unit μA nA V S mΩ Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on ...


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