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IRFL4315PbF

International Rectifier
Part Number IRFL4315PbF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 4, 2015
Detailed Description Applications l High frequency DC-DC converters PD - 95258A IRFL4315PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max I...
Datasheet PDF File IRFL4315PbF PDF File

IRFL4315PbF
IRFL4315PbF

Overview
Applications l High frequency DC-DC converters PD - 95258A IRFL4315PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 185mW@VGS = 10V 2.
6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds SOT-223 Max.
2.
6 2.
1 21 2.
8 0.
02 ± 30 6.
3 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient (PCB Mount, steady state)„ Typ.
––– Notes  through † are on page 8 www.
irf.
com Max.
45 Units °C/W 1 09/22/10 IRFL4315PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 150 ––– ––– 3.
0 ––– ––– ––– ––– 0.
19 ––– ––– 185 ––– 5.
0 ––– 25 ––– 250 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 100 ––– ––– -100 Units V V/°C mΩ V µA nA Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA ƒ VGS = 10V, ID = 1.
6A ƒ VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
gfs Forward Transconductance Qg Total Gate Charge 3.
5 ––– ––– ––– 12 19 Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge ––– 2.
1 3.
1 ––– 6.
8 10 td(on) tr Turn-On Delay Time Rise Time –––...


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