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Si4420DYPbF

Part Number	Si4420DYPbF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Oct 4, 2015
Detailed Description	PD - 95729 Si4420DYPbF l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l L...
Datasheet	Si4420DYPbF PDF File

Overview

PD - 95729 Si4420DYPbF l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free S S S G Description This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.
The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET AA 1 8D 2 7D 3 6D 4 5D Top View VDSS = 30V RDS(on) = 0.
009Ω SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.
irf.
com Parameter Maximum Junction-to-Ambient Max.
30 ±12.
5 ±10 ±50 2.
5 1.
6 0.
02 400 ± 20 -55 to + 150 Max.
50 Units V A W W/°C mJ V °C Units °C/W 1 8/11/04 Si4420DYPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– 0.
028 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.
009 ––– ––– 0.
013 Ω VGS = 10V, ID = 12.
5A VGS = 4.
5V, ID = 10.
5A VGS(th) Gate Threshold Voltage 1.
0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance ––– 29 ––– S VDS = 15V, ID = 12.
5A IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 ––– ––– 5.
0 µA VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage Gat...

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Si4420DYPbF Power MOSFET - International Rectifier

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