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IRGP4750DPbF

International Rectifier
Part Number IRGP4750DPbF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Oct 4, 2015
Detailed Description   IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 3...
Datasheet PDF File IRGP4750DPbF PDF File

IRGP4750DPbF
IRGP4750DPbF


Overview
  IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.
5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 35A Applications  Industrial Motor Drive  UPS  Solar Inverters  Welding Features Low VCE(ON) and Switching Losses 5.
5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4750DPbF  TO‐247AC  C Collector E GC IRGP4750D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in ...



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