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IRFBC30AL

Vishay
Part Number IRFBC30AL
Manufacturer Vishay
Description Power MOSFET
Published Oct 6, 2015
Detailed Description IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max...
Datasheet PDF File IRFBC30AL PDF File

IRFBC30AL
IRFBC30AL

Overview
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 23 5.
4 11 Single I2PAK (TO-262) D2PAK (TO-263) 2.
2 D G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBC30AS-GE3 Lead (Pb)-free IRFBC30ASPbF SiHFBC30AS-E3 Note a.
See device orientation.
D2PAK (TO-263) SiHFBC30ASTRL-GE3a IRFBC30ASTRLPbFa SiHFBC30ASTL-E3a D2PAK (TO-263) SiHFBC30ASTRR-GE3a IRFBC30ASTRRPbFa SiHFBC30ASTR-E3a I2PAK (TO-262) SiHFBC30AL-GE3 IRFBC30ALPbF SiHFBC30AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 46 mH, Rg = 25 , IAS = 3.
6 A (see fig.
12).
c.
ISD  3.
6 A, dI/dt  170 A/μs, VDD  VDS, TJ  150 °C.
d.
1.
6 mm from case.
e.
Uses IRFBC30A/SiHFBC30A data and test conditions.
LIMIT 600 ± 30 3.
6 2.
3 14 0.
69 290 3.
6 7.
4 74 7.
0 - 55 to + 15...


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