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LMBT3906WT1G

Part Number	LMBT3906WT1G
Manufacturer	Leshan Radio Company
Description	General Purpose Transistor
Published	Oct 8, 2015
Detailed Description	LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ●FEATURES 1) We declare that the material of produc...
Datasheet	LMBT3906WT1G PDF File

Overview

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors PNP Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3906WT1G 2A 3000/Tape&Reel LMBT3906WT3G 2A 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Collector–Emitter Voltage VCEO Collector–Base Voltage VCBO Emitter–Base Voltage VEBO Collector Current — Continuous IC Limits –40 –40 –5 –200 Unit Vdc Vdc Vdc mAdc LMBT3906WT1G S-LMBT3906WT1G 3 1 2 SC–70 1 B ASE 3 COLLECT OR 2 EMIT T ER ●THERMAL CHARACTERISTICS Total Device Dissipation, PD 150 mW (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient Junction and Storage temperature RΘJA 833 ℃/W TJ,Tstg −55∼+150 ℃ 1.
Device mounted on FR4 glass epoxy printed circuit b...

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