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LMBT4401LT3G

Leshan Radio Company
Part Number LMBT4401LT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistor
Published Oct 8, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product...
Datasheet PDF File LMBT4401LT3G PDF File

LMBT4401LT3G
LMBT4401LT3G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT4401LT1G 2X 3000/Tape&Reel LMBT4401LT3G 2X 10000/Tape&Reel LMBT4401LT1G S-LMBT4401LT1G 3 1 2 SOT-23 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits 40 60 6 600 Unit Vdc Vdc Vdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.
FR–5 = 1.
0×0.
75×0.
062 in.
2.
Alumina = 0.
4×0.
3×0.
024 in.
99.
5% alumina.
PD RΘJA 225 mW 1.
8 mW/℃ 556 ℃/W PD RΘJA 300 mW 2.
4 mW/℃ 417 ℃/W TJ,Tstg −55∼+150 ℃ June,2015 Rev.
A 1/5 LESHAN RADIO COMPANY, LTD.
LMBT4401LT1G,S-LMBT4401LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 1.
0 mAdc, I B = 0) Collector–Base Breakdown Voltage Symbol VBR(CEO) VBR(CBO) (I C = 0.
1mAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 0.
1mAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 35 Vdc, V EB = 0.
4Vdc) Base Cutoff Current IBEV ( V CE = 35 Vdc, V EB = 0.
4Vdc) ON CHARACTERISTICS (Note 3.
) DC Current Gain hFE (I C = 0.
1 mAdc, V CE = 1.
0 Vdc) (I C = 1.
0 mAdc, V CE = 1.
0 Vdc) (I C = 10 mAdc, V CE = 1.
0 Vdc) (I C = 150 mAdc, V CE = 1.
0 Vdc) (I C = 500 mAdc, V CE = 2.
0 Vdc) Collector–Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) VCE(sat) (I C = 500mAdc, I B = 5...


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