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LMBT2222ALT1G

Leshan Radio Company
Part Number LMBT2222ALT1G
Manufacturer Leshan Radio Company
Description General Purpose Transistor
Published Oct 8, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product...
Datasheet PDF File LMBT2222ALT1G PDF File

LMBT2222ALT1G
LMBT2222ALT1G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT2222ALT1G 1P 3000/Tape&Reel LMBT2222ALT3G 1P 10000/Tape&Reel LMBT2222ALT1G S-LMBT2222ALT1G 3 1 2 SOT-23 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient Junction and Storage temperature 1.
FR–5 = 1.
0×0.
75×0.
062 in.
2.
Alumina = 0.
4×0.
3×0.
024 in.
99.
5% alumina.
Symbol VCEO VCBO VEBO IC Limits 40 75 6.
0 600 Unit Vdc Vdc Vdc mAdc PD RΘJA PD RΘJA TJ,Tstg 225 1.
8 556 300 2.
4 417 −55∼+150 mW mW/℃ ℃/W mW mW/℃ ℃/W ℃ June,2015 Rev.
A 1/6 LESHAN RADIO COMPANY, LTD.
LMBT2222ALT1G,S-LMBT2222ALT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage VBR(CEO) (IC = 10 mAdc, I B = 0) Collector–Base Breakdown Voltage VBR(CBO) (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 60 Vdc, V EB(off) = 3.
0Vdc) Collector Cutoff Current ICBO (V CB = 60 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0, TA = 125°C) Emitter Cutoff Current IEBO (V EB = 3.
0 Vdc, I C = 0) Base Cutoff Current IBL (V CE = 60 Vdc, V EB(off) = 3.
0 Vdc) ON CHARACTERISTICS (Note 1.
) DC Current Gain hFE (I C = 0.
1 mAdc, V CE = 10 Vdc) (I C = 1.
0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc,...


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