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LMBT2907ALT3G

Leshan Radio Company
Part Number LMBT2907ALT3G
Manufacturer Leshan Radio Company
Description General Purpose Transistor
Published Oct 8, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ●FEATURES 1) We declare that the material of product...
Datasheet PDF File LMBT2907ALT3G PDF File

LMBT2907ALT3G
LMBT2907ALT3G

Overview
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors PNP Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT2907ALT1G 2F 3000/Tape&Reel LMBT2907ALT3G 2F 10000/Tape&Reel LMBT2907ALT1G S-LMBT2907ALT1G 3 1 2 SOT-23 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits –60 –60 –5 –600 Unit Vdc Vdc Vdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1.
FR–5 = 1.
0×0.
75×0.
062 in.
2.
Alumina = 0.
4×0.
3×0.
024 in.
99.
5% alumina.
PD RΘJA 225 mW 1.
8 mW/℃ 556 ℃/W PD RΘJA 300 mW 2.
4 mW/℃ 417 ℃/W TJ,Tstg −55∼+150 ℃ June,2015 Rev.
A 1/5 LESHAN RADIO COMPANY, LTD.
LMBT2907ALT1G,S-LMBT2907ALT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = –10 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 μAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0) Collector Cutoff Current ( V CB = –30 Vdc, V EB(off) =– 5.
0Vdc) Symbol VBR(CEO) VBR(CBO) VBR(EBO) ICEX Collector Cutoff Current (V CB = –50 Vdc, I E = 0) (V CB =–50 Vdc, I E = 0, TA = 125°C) Base Current (V CE = –30 Vdc, V EB(off) = –0.
5Vdc) ICBO IB ON CHARACTERISTICS (Note 1.
) DC Current Gain (I C = –0.
1 mAdc, V CE = –10 Vdc) (I C = –1.
0 mAdc, V CE = –10 Vdc) (I C = –10 mAdc, V CE = –10 Vdc) (I C = –150 mAdc, V CE =– 10 Vdc) (3) (I C = –500 mAdc, V CE =– 10 Vdc)(3) Col...


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