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FGB20N60SF

Fairchild Semiconductor
Part Number FGB20N60SF
Manufacturer Fairchild Semiconductor
Description 20A Field Stop IGBT
Published Oct 8, 2015
Detailed Description FGB20N60SF — 600 V, 20 A Field Stop IGBT FGB20N60SF 600 V, 20 A Field Stop IGBT Features • High Current Capability • Lo...
Datasheet PDF File FGB20N60SF PDF File

FGB20N60SF
FGB20N60SF

Overview
FGB20N60SF — 600 V, 20 A Field Stop IGBT FGB20N60SF 600 V, 20 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =2.
2 V @ IC = 20 A • High Input Impedance • Fast Switching : EOFF = 8 uJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC November 2013 General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
GCE D2-PAK COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp.
for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max.
junction temperature Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (PCB Mount)(2) Notes: 2: Mounted on 1” square PCB(FR4 or G-10 material) C G E Ratings 600  20 40 20 60 208 83 -55 to +150 -55 to +150 300 Typ.
- Max.
0.
6 40 Unit V V A A A W W oC oC oC Unit oC/W oC/W ©2010 Fairchild Semiconductor Corporation FGB20N60SF Rev.
C1 1 www.
fairchildsemi.
com FGB20N60SF — 600 V, 20 A Field Stop IGBT Package Marking and Ordering Information Part Number Top Mark Package Packing Method FGB20N60SF FGB20N60SF D2-PAK Reel Reel Size 13” Dia Tape Width N/A Quantity 800 Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit Off Characteristics BVCES BVCES TJ ICES IGES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A Temperature Coefficient...


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