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FSYC163R

Intersil Corporation
Part Number FSYC163R
Manufacturer Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The ...
Datasheet PDF File FSYC163R PDF File

FSYC163R
FSYC163R

Overview
FSYC163D, FSYC163R Data Sheet May 1999 File Number 4740 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to be radiation ...


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