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1N914

NXP
Part Number 1N914
Manufacturer NXP
Description High-speed diode
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 ...
Datasheet PDF File 1N914 PDF File

1N914
1N914

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max.
4 ns • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
100 V • Repetitive peak forward current: max.
225 mA.
The diode is type branded.
handbook, halfpage k 1N914 DESCRIPTION The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
a MAM246 APPLICATIONS • High-speed switching.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.
5 250 +200 175 A A A mW °C °C see Fig.
2; note 1 CONDITIONS − − − − MIN.
MAX.
100 75 75 225 V V mA mA UNIT 1999 May 26 2 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.
5 VR = 20 V VR = 75 V VR = 20 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.
6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.
7 Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.
8 25 5 50 4 ...


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