DatasheetsPDF.com

MDS3651

MagnaChip
Part Number MDS3651
Manufacturer MagnaChip
Description Single P-Channel Trench MOSFET
Published Oct 11, 2015
Detailed Description MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ G...
Datasheet PDF File MDS3651 PDF File

MDS3651
MDS3651

Overview
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.
3A, 35mΩ MDS3651 Single P-Channel Trench MOSFET, -30V, -6.
0A, 35mΩ General Description The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features  VDS = -30V  ID = -6.
0A @ VGS = -10V  RDS(ON) <35m @ VGS = -10V <55m @ VGS = -4.
5V Applications  Inverters  General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg S Rating -30 ±20 -6.
0 -4.
1 -30 2 0.
8 60.
5 -55~150 Unit V V A A A W mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Rating 62.
5 60 Unit oC/W January 2009.
Version 2.
0 1 MagnaChip Semiconductor Ltd.
MDS3651– Single P-Channel Trench MOSFET, -30V, -5.
3A, 35mΩ Ordering Information Part Number MDS3651URH Temp.
Range -55~150oC Package SOIC-8 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (Ta =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gFS Qg Qgs Qgd Ci...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)