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LMBT3906DW1T1G

Leshan Radio Company
Part Number LMBT3906DW1T1G
Manufacturer Leshan Radio Company
Description PNP Transistor
Published Oct 12, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon The LMBT3906DW1T1G device is a spin–off of our po...
Datasheet PDF File LMBT3906DW1T1G PDF File

LMBT3906DW1T1G
LMBT3906DW1T1G

Overview
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors PNP Silicon The LMBT3906DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device.
It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package.
By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.
●FEATURES 1）hFE, 100–300 2）Low VCE(sat),≦0.
4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces Component Count 6）We declare that the material of product compliant with RoHS requirements and Halogen Free.
7）S- Prefix for Automotive and Other Applications Requi...


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