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IRF6797MTRPbF

International Rectifier
Part Number IRF6797MTRPbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET plus Schottky Diode
Published Oct 12, 2015
Detailed Description PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead ...
Datasheet PDF File IRF6797MTRPbF PDF File

IRF6797MTRPbF
IRF6797MTRPbF

Overview
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.
7 mm) 25V max ±20V max 1.
1mΩ@ 10V 1.
8mΩ@ 4.
5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  Qg tot 45nC Qgd 13nC Qgs2 6.
2nC Qrr 38nC Qoss 38nC Vgs(th) 1.
8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync.
FET socket of Sync.
Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses.
This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit.
The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors.
The IRF...


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