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P6NK50Z

STMicroelectronics
Part Number P6NK50Z
Manufacturer STMicroelectronics
Description STP6NK50Z
Published Oct 12, 2015
Detailed Description STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TY...
Datasheet PDF File P6NK50Z PDF File

P6NK50Z
P6NK50Z

Overview
STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.
93Ω - 5.
6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z STF6NK50Z STD6NK50Z 500 V 500 V 500 V < 1.
2 Ω < 1.
2 Ω < 1.
2 Ω 5.
6 A 5.
6 A 5.
6 A 90 W 25 W 90 W s TYPICAL RDS(on) = 0.
93 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
TO-220 3 2 1 TO-220FP 3 1 DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDER CODES PART NUMBER STP6NK50Z STF6NK50Z STD6NK50ZT4 April 2004 MARKING P6NK50Z F6NK50Z D6NK50Z PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL 1/12 STP6NK50Z - STF6NK50Z - STD6NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Operating Junction Temperature Tstg Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤ 5.
6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient ...


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