DatasheetsPDF.com

NP89N055NUK

Renesas
Part Number NP89N055NUK
Manufacturer Renesas
Description MOSFET
Published Oct 13, 2015
Detailed Description Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0100 Rev.1.00 Jan 11, 2012 Des...
Datasheet PDF File NP89N055NUK PDF File

NP89N055NUK
NP89N055NUK

Overview
Preliminary Data Sheet NP89N055MUK, NP89N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0600EJ0100 Rev.
1.
00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 4.
4 m MAX.
(VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4000 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP89N055MUK-S18-AY *1 NP89N055NUK-S18-AY *1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-220 (MP-25K) TO-262 (MP-25SK) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)