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R6035KNZ1

Rohm
Part Number R6035KNZ1
Manufacturer Rohm
Description N-channel MOSFET
Published Oct 14, 2015
Detailed Description R6035KNZ1 　　Nch 600V 35A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.102Ω ±35A 379W lFeatures 1) Low o...
Datasheet PDF File R6035KNZ1 PDF File

R6035KNZ1
R6035KNZ1

Overview
R6035KNZ1 　　Nch 600V 35A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 600V 0.
102Ω ±35A 379W lFeatures 1) Low on-resistance.
2) Ultra fast switching speed.
3) Parallel use is easy.
4) Pb-free lead plating ; RoHS compliant lOutline TO-247 　 　　　　　　 lInner circuit 　 lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) Type Basic ordering unit (pcs) 450 Taping code C9 Marking R6035KNZ1 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 600 ±35 ±105 V A A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 6.
6 A Avalanche energy, single pulse EAS*3 796 mJ Power dissipation (Tc = 25°C) PD 379 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/12 20150914 - Rev.
001 　 　 R6035KNZ1 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA Tsold Values Unit Min.
Typ.
Max.
- - 0.
33 ℃/W - - 30 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 18.
1A RDS(on)*5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min.
Typ.
Max.
600 - - V 　　　 - - 100 μA - - 1000 - - ±100 nA 3 - 5V 　　　 - ...


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