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NP90N055NUK

Renesas
Part Number NP90N055NUK
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Oct 14, 2015
Detailed Description Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.1.00 Jan 11, 2012 Des...
Datasheet PDF File NP90N055NUK PDF File

NP90N055NUK
NP90N055NUK

Overview
Preliminary Data Sheet NP90N055MUK, NP90N055NUK MOS FIELD EFFECT TRANSISTOR R07DS0602EJ0100 Rev.
1.
00 Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 3.
8 m MAX.
(VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 4900 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP90N055MUK-S18-AY *1 NP90N055NUK-S18-AY *1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-220 (MP-25K) TO-262 (MP-25SK) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT1 Total Power Dissipation (TA = 25°C) PT2 Channel Temperature Tch Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2 Tstg IAR EAR Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V Ratings 55 20 90 360 176 1.
8 175 –55 to 175 38 144 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.
85 °C/W 83.
3 °C/W R07DS0602EJ0100 Rev.
1.
00 Jan 11, 2012 Page 1 of 6 NP90N055MUK, NP90N055NUK Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: *1 Pulsed test Symbol IDSS IGSS VGS(th) | yfs | RDS(on...


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