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AUIRFSL4010

International Rectifier
Part Number AUIRFSL4010
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 14, 2015
Detailed Description AUTOMOTIVE GRADE PD - 96396A AUIRFS4010 Features AUIRFSL4010 l Advanced Process Technology l Ultra Low On-Resistance...
Datasheet PDF File AUIRFSL4010 PDF File

AUIRFSL4010
AUIRFSL4010

Overview
AUTOMOTIVE GRADE PD - 96396A AUIRFS4010 Features AUIRFSL4010 l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * HEXFET® Power MOSFET D VDSS 100V RDS(on) typ.
3.
9m: :G max.
4.
7m S ID 180A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D S G D2Pak AUIRFS4010 D S D G TO-262 AUIRFSL4010 Absolute Maximum Ratings G Gate D Drain S Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) cAvalanche Current cRepetitive Avalanche Energy ePeak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Max.
180 127 720 375 2.
5 ± 20 3...


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