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NP180N04TUK

Renesas
Part Number NP180N04TUK
Manufacturer Renesas
Description N-Channel MOSFET
Published Oct 14, 2015
Detailed Description NP180N04TUK MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0542EJ0200 Rev. 2.00 May 24, 2018 Description NP180N04TUK is N...
Datasheet PDF File NP180N04TUK PDF File

NP180N04TUK
NP180N04TUK

Overview
NP180N04TUK MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0542EJ0200 Rev.
2.
00 May 24, 2018 Description NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features ･ Super low on-state resistance RDS(on) = 1.
05 m MAX.
( VGS = 10 V, ID = 90 A ) ･ Low Ciss Ciss = 10500 pF TYP.
( VDS = 25 V ) ･ Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
Lead Plating Packing NP180N04TUK-E1-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) NP180N04TUK-E2-AY *1 Taping (E2 type) Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
) Package TO-263-7pin(MP-25ZT) Absolute Maximum Ratings (TA=25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±180 ±720 348 1.
8 175 -55 to 175 72 518 Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) *3 0.
43 Channel to Ambient Thermal Resistance Rth(ch-A) *3 83.
3 Notes *1.
TC = 25°C, PW ≤ 10 μ s, Duty Cycle ≤ 1% *2.
RG = 25 Ω, VGS = 20 → 0 V *3.
Not subject of production test.
Verified by design/characterization.
Unit V V A A W W °C °C A mJ °C/W °C/W R07DS0542EJ0200 Rev.
2.
00 May 24, 2018 Page 1 of 6 NP180N04TUK Electrical Characteristics (TA=25°C) Item Symbol Min Typ Max Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 IDSS IGSS VGS(th) | yfs | RDS(on) 1 ±100 2.
0 3.
0 4.
0 75 150 0.
85 1.
05 Input Capacitance *2 Output Capacitance *2 Reverse Transfer Capacitance *2 Turn-on Delay Time *2 Rise Time *2 Turn-off Delay Time *2 Fall Time *2 Tota...


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