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NP110N055PUK

Renesas
Part Number NP110N055PUK
Manufacturer Renesas
Description N-Channel MOSFET
Published Oct 14, 2015
Detailed Description NP110N055PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0591EJ0200 Rev.2.00 May 24, 2018 Description The ...
Datasheet PDF File NP110N055PUK PDF File

NP110N055PUK
NP110N055PUK

Overview
NP110N055PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0591EJ0200 Rev.
2.
00 May 24, 2018 Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance RDS(on) = 1.
75 m MAX.
(VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
Lead Plating Packing NP110N055PUK-E1-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) NP110N055PUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche C...


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