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RJK0702DPN-E0

Renesas Technology
Part Number RJK0702DPN-E0
Manufacturer Renesas Technology
Description N-Channel MOS FET
Published Oct 16, 2015
Detailed Description RJK0702DPN-E0 N-Channel MOS FET 75 V, 90 A, 4.8 m Features  High speed switching  Low drive current  Low on-resistan...
Datasheet PDF File RJK0702DPN-E0 PDF File

RJK0702DPN-E0
RJK0702DPN-E0

Overview
RJK0702DPN-E0 N-Channel MOS FET 75 V, 90 A, 4.
8 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 3.
9 m typ.
(at VGS = 10 V)  Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0623EJ0200 Rev.
2.
00 Aug 24, 2012 2, 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at L = 100 H , Tch = 25C, Rg  50, 3.
Tc = 25C Ratings 75 ±20 90 270 90 45 304 150 0.
83 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS0623EJ0200 Rev.
2.
00 Aug 24, 2012 Page 1 ...


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